Request a Competitive Quote for Part Number S82S129F with NSN 5962010335504 by Philips Semiconductors Ltd!
Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Hermetically sealed and monolithic and positive outputs and W/enable and programmable and programmed and high speed and wire-or outputs
Thank you for taking an interest in the top-caliber NSN products we feature here on AI NSN Parts. On this page, you can submit a quote request for part number S82S129F, a Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Hermetically sealed and monolithic and positive outputs and W/enable and programmable and programmed and high speed and wire-or outputs item that is manufactured by Philips Semiconductors Ltd. Listed alongside the NSN 5962010335504 within our database, part number S82S129F is conveniently ready for purchase at any time.
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Procurement notes for S82S129F.
Inclosure Configuration: Dual-in-line Operating Temp Range: -55.0 to 125.0 deg celsius Features Provided: Hermetically sealed and monolithic and positive outputs and W/enable and programmable and programmed and high speed and wire-or outputs ASAP can support availability checks, alternate review, lead-time confirmation, and documentation requirements tied to the part number, NSN, CAGE code, or active bill of materials.
Catalog classifications
NSN Information for Part Number S82S129F with NSN 5962-01-033-5504, 5962010335504
Characteristics Data of NSN 5962-01-033-5504, 5962010335504
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.747 INCHES MINIMUM AND 0.815 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.200 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 525.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+200.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | BUILDING @BLOCK 57 FSCM 30003 |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND PROGRAMMABLE AND PROGRAMMED AND HIGH SPEED AND WIRE-OR OUTPUTS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | GOLD |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| PMLC | PRECIOUS MATERIAL AND LOCATION | TERMINALS GOLD |
| TEST | TEST DATA DOCUMENT | 06424-10560 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWIN |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |