Request a Competitive Quote for Part Number G330510-303 with NSN 5962013333430 by Raytheon Company!
Microcircuit Memory
Thank you for taking an interest in the top-caliber NSN products we feature here on AI NSN Parts. On this page, you can submit a quote request for part number G330510-303, a Microcircuit Memory item that is manufactured by Raytheon Company. Listed alongside the NSN 5962013333430 within our database, part number G330510-303 is conveniently ready for purchase at any time.
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Procurement notes for G330510-303.
Microcircuit Memory ASAP can support availability checks, alternate review, lead-time confirmation, and documentation requirements tied to the part number, NSN, CAGE code, or active bill of materials.
Catalog classifications
NSN Information for Part Number G330510-303 with NSN 5962-01-333-3430, 5962013333430
Characteristics Data of NSN 5962-01-333-3430, 5962013333430
| MRC | Criteria | Characteristic |
|---|---|---|
| ABKW | OVERALL HEIGHT | 0.357 INCHES MINIMUM AND 0.432 INCHES MAXIMUM |
| ADAQ | BODY LENGTH | 1.490 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 350.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 26 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 60.00 MILLIAMPERES MAXIMUM SUPPLY |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | EPROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |